User:Mancunion

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The page below was what I had created in Nov 2006, but had opted to delete in Dec 2006 as a result of vandalism. It is saved here for personal records. ....Mancunion 23:14, 7 December 2006 (UTC)


Dr. Deodatta V. Shenai-Khatkhate is a Scientist in the field of Organometallic chemistry, with specialization in innovative synthesis and purification strategies to ultra-pure organometallic compounds used in microelectronics and nanotechnology. Dr. Shenai-Khatkhate has authored numerous scientific publications that comprise refereed papers, reviews, conference presentations, and international patents. His research and scientific articles encompass a broad range of organometallic compounds of various chemical elements from periodic table, such as aluminum, gallium, indium, zinc, cadmium, phosphorous, arsenic, antimony, bismuth, silicon, germanium, tin, sulfur, selenium, tellurium, titanium, zirconium, hafnium, niobium, vanadium, tantalum, tungsten, molybdenum, ruthenium, copper, nickel, cobalt, silver, iron, manganese, chromium, lanthanum and other lanthanide metals. Some of his latest scientific breakthroughs include improved cylinder designs for stable delivery of solid organometallic compounds in compound semiconductor fabrication; development of safer liquid "Green Chemistry" alternatives to highly toxic gases (such as arsine, phosphine and germane) in semiconductor industry; and development of novel high purity organometallic precursors for semiconductors and High-k Dielectric thin films.

[edit] Biographic Information

Deodatta Vinayak Shenai-Khatkhate was born in Kankavli, Maharashtra, India. Deodatta studied at Elphinstone College, Institute of Science and UDCT in Mumbai; and graduated with B.Sc.(Hons) in Chemistry & Physics and B.Sc.(Tech) in Technology of Polymers and Paints degrees from Mumbai University, India. Subsequent to this, Deodatta earned his M.Sc. in Polymer Science & Technology and Ph.D. in Polymer Science & Organometallic chemistry degrees from UMIST and University of Manchester, Manchester, UK, resp. Deodatta continued his research, at post-doctoral level, in novel ultra-pure organometallic precursors and their application in semiconductors; in association with Professor David J. Cole-Hamilton and Dr. J. Brian Mullin, at University of Liverpool, England, and University of St. Andrews, Scotland. During his five-year Research scientist tenure, Deodatta contributed significantly to various Compound semiconductor research projects sponsored by Royal Signals and Radar Establishment (RSRE) / UK Ministry of Defence, England. In 1988, Deodatta accepted the offer of R&D Scientist position at Morton Thiokol, Morton International Company, located in Massachusetts, and emigrated to United States of America from the UK across the pond. Deodatta lives in Danvers, Massachusetts, with his wife, Usha, and daughter, Anisha.

[edit] Selected Publications

  • Comparison of ALD of HfO2, SiO2, and HfSiOx Thin Films Using Various Metal/Silicon Alkylamide Precursors; Presentation at 210th ECS International Meeting, Cancun, Mexico, 30 October 2006, To be published in ECS Transactions (2006).
  • Development of Novel Germanium Compounds for Use in SiGe Epitaxy; ECS Transactions, Volume 3, Issue 7, 30 October 2006, Pages 867-873.
  • The Deposition of Polycrystalline SiGe with Different Ge Precursors; ECS Transactions, Volume 3, Issue 7, 30 October 2006, Pages 849-860.
  • 歪みSiと化合物半導体向けの Geプリカーサ; Semiconductor International (Japan); August 1, 2006.
  • 摘要 随着Ge重要性的提高，需要寻找比GeH4更适用的前驱物。本文对用于应变Si和化合半导体集成电路的两种新型Ge前驱物的品质特性进行了探讨。当集成度不断增加,锗也变得日益重要。; Semiconductor International (China); June 1, 2006.
  • Ge Precursors for Strained Si and Compound Semiconductors; Semiconductor International; April 1, 2006.
  • Exceptionally stable vapor delivery of trimethylindium under intense OMVPE growth conditions; Journal of Crystal Growth, Volume 287, Issue 2, 25 January 2006, Pages 679-683.
  • Designing novel organogermanium OMVPE precursors for high-purity germanium films; Journal of Crystal Growth, Volume 287, Issue 2, 25 January 2006, Pages 684-687.
  • Correlation of film properties and reduced impurity concentrations in sources for III/V-MOVPE using high-purity trimethylindium and tertiarybutylphosphine; Journal of Crystal Growth, Volume 272, Issues 1-4, 10 December 2004, Pages 603-608.
  • Environment, health and safety issues for sources used in MOVPE growth of compound semiconductors; Journal of Crystal Growth, Volume 272, Issues 1-4, 10 December 2004, Pages 816-821.
  • GC/MS analyses of MOVPE precursors and characterization of impurities in trimethylindium, trimethylaluminum and bis(cyclopentadienyl)magnesium; Journal of Crystal Growth, Volume 248, February 2003, Pages 82-85.
  • Correlation of vapor pressure equation and film properties with trimethylindium purity for the MOVPE grown III–V compounds; Journal of Crystal Growth, Volume 248, February 2003, Pages 91-98.
  • Homolytic reactions of diorganotellurium and diorganoditellurium compounds in solution; an EPR study; Journal of Organometallic Chemistry, Volume 430, Issue 1, 2 June 1992, Pages 43-52
  • Synthesis and decomposition studies of dialkyltellurides of type RTeR′; Journal of Crystal Growth, Volume 107, Issues 1-4, 1 January 1991, Pages 325-330.
  • Organometallic Molecules for Semiconductor Fabrication; Philosophical Transactions of the Royal Society of London. Series A, Mathematical and Physical Sciences, Vol. 330, No. 1610, Molecular Chemistry for Electronics (Feb. 23, 1990), pp. 173-182.
  • The growth of CdHgTe by MOCVD at reduced temperatures; Journal of Crystal Growth, Volume 86, Issues 1-4, 1 January 1990, Pages 233-239.
  • Laser-induced epitaxial growth of CdTe; Materials Letters, Volume 7, Issues 1-2, August 1988, Pages 25-31
  • Ultra-pure organotellurium precursors for the low temperature MOVPE growth of II/VI compound semiconductors; Journal of Crystal Growth, Volume 93, Issues 1-4, 1988, Pages 744-749.
  • Preparation and purification of metal alkyls for use in the MOCVD growth of II/VI compound semiconductors; Journal of Crystal Growth, Volume 77, Issues 1-3, September 1986, Pages 27-31.
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