Indium gallium phosphide

From Wikipedia, the free encyclopedia

You have new messages (last change).

Indium gallium phosphide (InGaP) is a semiconductor composed of indium, gallium and phosphorus. It is used in high-power and high-frequency electronics because of its superior electron velocity with respect to the more common semiconductors silicon and gallium arsenide.

It is used mainly in HEMT and HBT structures,but also for the fabrication of high efficiency solar cells used for space applications and, in combination with aluminium (AlGaInP alloy) to make high brightness LEDs with orange-red, orange, yellow, and green colors.

Indium gallium phosphide is an alloy of indium phosphide and gallium phosphide.

Special importance has a alloy of Ga0.5In0.5P, which is almost lattice matched to GaAs. This allows, in combination with (AlxGa1-x)0.5In0.5, the growth lattice matched quantum wells for red emitting semiconductor lasers, e.g. red emitting (650nm) RCLEDs or VCSELs for PMMA plastic optical fibers.

[edit] See also

[edit] External links

[edit] References

 This condensed matter physics-related article is a stub. You can help Wikipedia by expanding it.
Retrieved from "http://en.wikipedia.org../../../i/n/d/Indium_gallium_phosphide.html"