Aluminium antimonide
From Wikipedia, the free encyclopedia
| Aluminium antimonide | |
|---|---|
| Image:Aluminium antimonide.jpg | |
| General | |
| Systematic name | ? |
| Other names | ? |
| Molecular formula | AlSb |
| SMILES | Al#Sb |
| Molar mass | 148.8 g/mol |
| Appearance | ? |
| CAS number | [25152-52-7] |
| Properties | |
| Density and phase | ? g/cm³, ? |
| Solubility in water | ? g/100 ml (?°C) |
| Melting point | ?°C (? K) |
| Boiling point | ?°C (? K) |
| Acidity (pKa) | ? |
| Basicity (pKb) | ? |
| Chiral rotation [α]D | ?° |
| Viscosity | ? cP at ?°C |
| Structure | |
| Molecular shape | ? |
| Coordination geometry |
? |
| Crystal structure | ? |
| Dipole moment | ? D |
| Hazards | |
| MSDS | External MSDS |
| Main hazards | ? |
| NFPA 704 | |
| Flash point | ?°C |
| R/S statement | R: ? S: ? |
| RTECS number | ? |
| Supplementary data page | |
| Structure and properties |
n, εr, etc. |
| Thermodynamic data |
Phase behaviour Solid, liquid, gas |
| Spectral data | UV, IR, NMR, MS |
| Related compounds | |
| Other anions | ? |
| Other cations | ? |
| Related ? | ? |
| Related compounds | ? |
| Except where noted otherwise, data are given for materials in their standard state (at 25°C, 100 kPa) Infobox disclaimer and references |
|
Aluminum antimonide/Aluminium antimonide (AlSb) is a semiconductor material of the III-V family containing aluminum and antimony. It has a CAS number [25152-52-7] [1]. The lattice constant is 0.61 nm. The molecular weight is 148.7 g mol-1. The density is 4200 kg m-3. The indirect bandgap is approximately 1.6 eV at 300 K, whereas the direct band gap is 2.22 eV.
Electron mobility is 200 cm².V-1.s-1 and hole mobility is 400 cm².V-1.s-1 at 300 K. Refractive index is 3.3 at 2 µm wavelength. The dielectric constant is 10.9 at micrtowave frequencies.
AlSb can be alloyed with other III-V materials to produce the following ternary materials: AlInSb, AlGaSb and AlAsSb.
[edit] See also
[edit] References
- Microwave dielectric constant of aluminium antimonide, K Seeger and E Schonherr, Semicond. Sci. Technol. vol. 6 pp. 301-302 (1991) DOI:10.1088/0268-1242/6/4/013
