16 nanometer

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CMOS manufacturing processes

1 µm 800 nm (0.80 µm) 600 nm (0.60 µm) 350 nm (0.35 µm) 250 nm (0.25 µm) 180 nm (0.18 µm) 130 nm (0.13 µm) 90 nm 65 nm 45 nm 32 nm 22 nm 16 nm

The 16 nanometer (16 nm) node is the technology node following 22 nm node. It is expected to be reached by semiconductor companies in the 2013-4 timeframe. At that time, the typical half-pitch for a memory cell would be around 16 nm. The exact naming of this technology node comes from the International Technology Roadmap for Semiconductors (ITRS).

At this point, very few 16 nm features are capable of being produced using reliable processes in mass quantity, with some notable attempts like carbon nanotubes. Even in these cases, the variation within any sample population is quite large and the compatibility of such exotic processes and materials with current mainstream ones present further issues.

Preceded by: 22 nm

CMOS manufacturing processes

Succeeded by: various predictions